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Freescale Semiconductor Technical Data
Document Number: MRF8S18120H Rev. 0, 9/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW
Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.7 hD (%) 49.8 51.4 53.9
MRF8S18120HR3 MRF8S18120HSR3
1805 - 1880 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
* Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point ] 120 Watts CW * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.
Gps (dB) 17.9 18.2 18.3 hD (%) 41.0 41.9 43.2 SR1 @ 400 kHz (dBc) - 64 - 63 - 61 SR2 @ 600 kHz (dBc) - 76 - 76 - 76 EVM (% rms) 1.6 1.7 2.0
CASE 465- 06, STYLE 1 NI - 780 MRF8S18120HR3
Frequency 1805 MHz 1840 MHz 1880 MHz
CASE 465A - 06, STYLE 1 NI - 780S MRF8S18120HSR3
Features * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF8S18120HR3 MRF8S18120HSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 72 W CW, 28 Vdc, IDQ = 800 mA Case Temperature 79C, 120 W CW, 28 Vdc, IDQ = 800 mA Symbol RJC Value (1,2) 0.47 0.46 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 260 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.3 Adc) VGS(th) VGS(Q) VDS(on) 1.2 1.8 0.1 1.8 2.6 0.2 2.7 3.3 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW, f = 1805 MHz Power Gain Gps 17 18.2 20 Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW D IRL P1dB 48 -- 112 49.8 - 11 -- -- -8 --
dB % dB W IRL (dB) - 11 - 15 - 12
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW Gps hD Frequency (dB) (%) 1805 MHz 1840 MHz 1880 MHz 18.2 18.6 18.7 49.8 51.4 53.9
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. (continued)
MRF8S18120HR3 MRF8S18120HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 94 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 75 MHz Bandwidth @ Pout = 72 W CW Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 120 10 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 1805 - 1880 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
35 0.5 0.01 0.004
-- -- -- --
MHz dB dB/C dBm/C
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 46 W Avg., 1805 - 1880 MHz EDGE Modulation Gps (dB) 17.9 18.2 18.3 hD (%) 41.0 41.9 43.2 SR1 @ 400 kHz (dBc) - 64 - 63 - 61 SR2 @ 600 kHz (dBc) - 76 - 76 - 76 EVM (% rms) 1.6 1.7 2.0
Frequency 1805 MHz 1840 MHz 1880 MHz
MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 3
C13 R2 C3 C8 C4 C7 C6 C5 R1 C11 C12 C9 C10
CUT OUT AREA
C1
C2
MRF8S18120 Rev. 2
Figure 1. MRF8S18120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S18120HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C2 C3, C8 C4 C5 C6, C9 C7 C10, C11, C12 C13 R1 R2 PCB Description 12 pF Chip Capacitors 9.1 pF Chip Capacitors 10 nF Chip Capacitor 8.2 pF Chip Capacitor 2.2 F, 100 V Chip Capacitors 47 F, 16 V Tantalum Capacitor 10 F, 50 V Chip Capacitors 330 F, 63 V Electrolytic Capacitor 10 , 1/4 W Chip Resistor 4.75 , 1/4 W Chip Resistor 0.030, r = 2.55 Part Number ATC100B120JT500XT ATC100B9R1CT500XT C1825C103K1GAC - TU ATC100B8R2CT500XT C3225X7R2A225KT T491D476K016AT GRM55DR61H106KA88L MCRH63V337M13X21 - RH CRCW120610R0JNEA CRCW12064R75FNEA 250GX - 0300 - 55 - 22 Manufacturer ATC ATC Kemet ATC TDK Kemet Murata Multicomp Vishay Vishay Arlon
MRF8S18120HR3 MRF8S18120HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
21 VDD = 28 Vdc, Pout = 72 W CW, IDQ = 800 mA 20 Gps, POWER GAIN (dB) 19 18 17 IRL 16 15 1760 35 30 1920 D 50 Gps 45 40 D, DRAIN EFFICIENCY (%) 55 60
-5 -10 -15 -20
1780
1800
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)
Figure 2. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 72 Watts CW
21 20 Gps, POWER GAIN (dB) 19 Gps EVM, ERROR VECTOR MAGNITUDE (% rms) 18 17 IRL 16 EVM 15 1760 1780 1800 1820 1840 1860 1880 1900 1 1920 2 35 3 -5 -10 -15 -20 VDD = 28 Vdc, Pout = 46 W Avg. IDQ = 800 mA, EDGE Modulation D 40 50 45 D, DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 46 Watts Avg.
-10 VDD = 28 Vdc, Pout = 94 W (PEP) IDQ = 800 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz Gps, POWER GAIN (dB) IM3-U -30 IM3-L IM5-U -40 IM5-L 19 f = 1880 MHz 18 Gps 17 1840 MHz 1880 MHz 16 1805 MHz 15 D IM7-U -60 1 10 TWO-TONE SPACING (MHz) 100 14 1 10 Pout, OUTPUT POWER (WATTS) CW 100 300 VDD = 28 Vdc IDQ = 800 mA 0 15 30 1805 MHz 45 D, DRAIN EFFICIENCY (%) 1840 MHz 60 75
IMD, INTERMODULATION DISTORTION (dBc)
-20
-50
IM7-L
Figure 4. Intermodulation Distortion Products versus Two - Tone Spacing
Figure 5. Power Gain and Drain Efficiency versus Output Power
MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
6 EVM, ERROR VECTOR MAGNITUDE (% rms) SPECTRAL REGROWTH @ 400 kHz (dBc) 5 4 3 2 1 0 1800 46 W Avg. 25 W Avg. VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation Pout = 72 W Avg. -40 -45 -50 1840 MHz -55 1805 MHz -60 -65 -70 0 10 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation f = 1880 MHz
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)
Figure 6. EVM versus Frequency
Figure 7. Spectral Regrowth at 400 kHz versus Output Power
10 VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation f = 1880 MHz 6 45 1840 MHz D 1805 MHz EVM 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 1840 MHz 0 100 30 D, DRAIN EFFICIENCY (%) 8 60 75
SPECTRAL REGROWTH @ 600 kHz (dBc)
-55 -60
VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation
f = 1880 MHz -65 1840 MHz -70 -75 -80 0 10 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) 1805 MHz
EVM, ERROR VECTOR MAGNITUDE (% rms)
-50
4
2
15
Figure 8. Spectral Regrowth at 600 kHz versus Output Power
20 Gain 15 GAIN (dB)
Figure 9. EVM and Drain Efficiency versus Output Power
0
-5 IRL (dB)
10
-10
5
VDD = 28 Vdc Pin = 0 dBm IDQ = 800 mA
IRL
-15
0 1440 1540
1640
1740
1840
1940
2040
2140 2240
-20 2340
f, FREQUENCY (MHz)
Figure 10. Broadband Frequency Response
MRF8S18120HR3 MRF8S18120HSR3 6 RF Device Data Freescale Semiconductor
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 11. EDGE Spectrum
VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW f MHz 1760 1780 1800 1820 1840 1860 1880 1900 1920 Zsource W 1.53 - j1.94 1.53 - j1.82 1.56 - j1.90 1.56 - j1.86 1.57 - j1.75 1.51 - j1.64 1.49 - j1.58 1.49 - j1.55 1.48 - j1.53 Zload W 2.32 - j0.41 2.31 - j0.51 2.31 - j0.49 2.32 - j0.40 2.33 - j0.26 2.29 - j0.12 2.29 - j0.01 2.29 + j0.05 2.31 + j0.06
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 800 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 57 56 Pout, OUTPUT POWER (dBm) 55 54 53 52 51 50 49 48 47 46 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 1805 1840 1880 P1dB Watts 145 141 135 dBm 51.6 51.5 51.3 178 178 170 P3dB Watts dBm 52.5 52.5 52.3 Actual f = 1800 MHz f = 1880 MHz f = 1800 MHz f = 1880 MHz f = 1840 MHz f = 1840 MHz Ideal
Test Impedances per Compression Level f (MHz) 1805 1840 1880 P1dB P1dB P1dB Zsource 1.14 - j4.65 1.04 - j4.88 0.94 - j4.59 Zload 1.54 - j2.60 1.49 - j2.75 1.50 - j2.74
Figure 13. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S18120HR3 MRF8S18120HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 9
MRF8S18120HR3 MRF8S18120HSR3 10 RF Device Data Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 11
MRF8S18120HR3 MRF8S18120HSR3 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Sept. 2009 * Initial Release of Data Sheet Description
MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 13
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MRF8S18120HR3 MRF8S18120HSR3
Rev. 14 0, 9/2009 Document Number: MRF8S18120H
RF Device Data Freescale Semiconductor

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